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SiC Wafer

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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SiC Wafer

Brand Name : ZG

Model Number : MS

Certification : CE

Place of Origin : CHINA

MOQ : 1 piece

Price : USD10/piece

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 10000 pieces per month

Delivery Time : 3 working days

Packaging Details : Strong wooden box for Global shipping

Application : High power device Optoelectronic device GaN epitaxy device Light emitting diode

Diameter : Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6"

Thickness : 330 um ~ 350 um

Grade : Production grade / Research grade

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SIC Wafer

Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

SiC Wafer Application

High frequency device	High temperature device
High power device	Optoelectronic device
GaN epitaxy device	Light emitting diode

SiC Wafer Properties

Polytype	6H-SiC	4H-SiC
Crystal stacking sequence	ABCABC	ABCB
Lattice parameter	a=3.073A , c=15.117A	a=3.076A , c=10.053A
Band-gap	3.02 eV	3.27 eV
Dielectric constant	9.66	9.6
Refraction Index	n0 =2.707 , ne =2.755	n0 =2.719 ne =2.777

Product Specification

Polytype	4H / 6H
Diameter	Ø 2" / Ø 3" / Ø 4"
Thickness	330 um ~ 350 um
Orientation	On axis <0001> / Off axis <0001> off 4°
Conductivity	N - type / Semi-insulating
Dopant	N2 ( Nitrogen ) / V ( Vanadium )
Resistivity ( 4H-N )	0.015 ~ 0.03 ohm-cm
Resistivity ( 6H-N )	0.02 ~ 0.1 ohm-cm
Resistivity ( SI )	> 1E5 ohm-cm
Surface	CMP polished
TTV	<= 15 um
Bow / Warp	<= 25 um
Grade	Production grade / Research grade

SiC Wafer Images

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