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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

Brand Name : ZG

Model Number : MS

Certification : CE

Place of Origin : CHINA

MOQ : 1 piece

Price : USD10/piece

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 10000 pieces per month

Delivery Time : 3 working days

Packaging Details : Strong wooden box for Global shipping

Application : integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells

Diameter : Ø 4"/ Ø 6" / Ø 8"

Device Thickness : 2 um ~ 300 um

Coating : Oxide and nitride can be supplied on both sides of SOI wafer

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SOI Wafer ( Silicon-on-Insulator )

We provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . We can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .

SOI Wafer Application

High-speed ICs	High-temperature ICs
Low-power ICs	Low-voltage ICs
Microwave components	Power device
MEMS	Semiconductor

Product Specification

Method	Fusion bonding
Diameter	Ø 4"/ Ø 6" / Ø 8"
Device thickness	2 um ~ 300 um
Tolerance	+/- 0.5 um ~ 2 um
Orientation	<100> / <111> / <110> or others
Conductivity	P - type / N - type / Intrinsic
Dopant	Boron / Phosphorous / Antimony / Arsenic
Resistivity	0.001 ~ 100000 ohm-cm
Oxide thickness	500A ~ 4 um
Tolerance	+/- 5%
Handle wafer	>= 300 um
Surface	Double sides polished
Coating	Oxide and nitride can be supplied on both sides of SOI wafer

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

SOI Wafer Technical Ceramic Parts

2um SOI Wafer

300um SOI Wafer

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer Images